Reliability and electrical properties of gate oxide shorts in CMOS ICs
作者： Jerry M. Soden , Charles F. Hawkins
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摘要: This paper examines the reliability of gate oxide shorts in CMOS ICs. Gate cause increased quiescent IDD but may not initially affect functionality. These can subsequently change due to thermal and electric field stress during operation functional failure. Therefore, defects significantly degrade IC reliability. 14 refs.
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