Pseudo volume-plasmon into arrays of doped and un-doped semiconductors

摘要: We present a theoretical work which shows that for metamaterial consisting of periodic array doped and undoped semiconductors it is possible to define frequency wt corresponding pseudo volume-plasmon. depends on the thicknesses dielectric constants components plasma semiconductor. As its homologue in noble metal, volume-plasmon collective oscillation charges metallic part leading pure longitudinal electric wave. show degeneracy between anti-symmetric mode transverse magnetic field (TM) (TE). demonstrate this due periodicity structure transforms imaginary solution metal-dieletric interface into real case metamaterial.