MNOS non-volatile memory with write cycle suppression

摘要: An improved memory for storing digital data is described incorporating two variable threshold transistors per cell which are written in opposite directions concomitantly by applying a polarizing voltage across the gate insulator of each transistor. Subsequent writing into limited means sensing stored and comparing it with to be permit only write cycles where would opposite. The thereby operated out saturation shifting thresholds back forth directions. By utilizing devices cell, sensed difference conductance providing wider detection window.