Modeling of Quantum Transport in Semiconductor Devices

摘要: Publisher Summary This chapter describes quantum transport theory and its application to semiconductor devices. The effects appear in many guises: (1) modification of the statistical thermodynamics within device, (2) introduction new length scales, (3) ballistic interference, (4) fluctuations affecting device performance. Quantum can be used model several prototypical Modeling devices done with help density matrix, Wigner distribution, Green's functions. To use matrix describe structures, one must find a set governing equations that behavior particles appropriate including role scattering, all important boundary conditions. formalism offers advantages for modeling. It is phase-space description, similar semiclassical Boltzmann equation. Moreover, formalism, scattering local (in space) phenomenon. These two approaches (density distribution) involve only single time variable concentrate on arrive from spatial correlation. functions, however, include variables, propagation/correlation between points at different times.