Structural and dielectric properties of sputtered SrxZr(1−x)Oy
作者： Matthias Grube , Dominik Martin , Walter M. Weber , Thomas Mikolajick , Henning Riechert
DOI: 10.1063/1.4811226
关键词:
摘要: Over the past years, high-k dielectrics have been incorporated into modern semiconductor devices. One example is ZrO2, which has introduced in memory applications. This paper elucidates some difficulties with pure ZrO2 like unintended crystallization during growth of dielectric and evolution monoclinic phase, reduces k-value. The admixture Sr shown as a solution to circumvent those issues. A detailed structural analysis for varying stoichiometry ranging from perovskite SrZrO3 given. detected crystal structures are correlated our observations properties obtained by an electrical characterization.
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