Effect of compressive stress on stability of N-doped p-type ZnO
作者： Xingyou Chen , Zhenzhong Zhang , Bin Yao , Mingming Jiang , Shuangpeng Wang
DOI: 10.1063/1.3631677
关键词:
摘要: Nitrogen-doped p-type zinc oxide (p-ZnO:N) thin films were fabricated on a-/c-plane sapphire (a-/c-Al2O3) by plasma-assisted molecular beam epitaxy. Hall-effect measurements show that the ZnO:N c-Al2O3 degenerated into n-type after a preservation time; however, one grown a-Al2O3 showed good stability. The conversion of conductivity in ascribed to faster disappearance NO and growing N2(O), which is demonstrated x-ray photoelectron spectroscopy (XPS). Compressive stress, caused lattice misfit, was revealed Raman spectra optical absorption spectra, it regarded as root instability ZnO:N.
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