Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films

摘要: The lateral thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films is measured using microbridges elevated three micrometers above a substrate. bridges, lightly in their central regions and elsewhere, are fabricated sacrificial silicon‐dioxide layer phosphorus out‐diffusion from oxide. Voltage‐current characteristics on the bridges both under high vacuum silicone oil used to calculate silicon. experimental values for range 0.29 0.34 W cm−1 K−1 average 0.32 W cm−1 K−1. These agree closely with results obtained by second method that employs uniformly bridges. In method, high‐vacuum, voltage‐current indicated conductivities two samples a...