Thermal effect on CZTS solar cells in different process of ZnO/ITO window layer fabrication

摘要: In this work, a window layer consisting of zinc oxide (ZnO) and indium‑tin-oxide (ITO) thin films was prepared by sputtering under different heat treatment processes (in-situ or post annealing) to study the effect on structural ordering performance Cu2ZnSnS4 (CZTS) solar cells. It is found that all characteristic parameters including open circuit voltage (Voc), short current density (Jsc), fill factor (FF) efficiency CZTS cells were improved for with ITO thickness = 350 nm post-annealed at lower temperature. Specifically, Voc device increased 57 mV when 200 °C (Voc = 585 mV) compared made 300 °C (Voc = 528 mV). We further reduced thickness thickness = 140 nm which deposited in an in-situ annealing process 220 °C. Compared 350 nm thick film post-annealing, it help boost (equals 635 mV) thus (3.20%) Study evolution full width half maximum (FWHM) intensity ratio (Q) major Raman scattering peaks indicates much structure disorder material ZnO/ITO annealed low Further analysis diode ideality (A), reverse saturation (J0) Urbach energy (Eu) these devices revealed quality bulk and/or CZTS/CdS heterojunction more degraded higher However, provided extra benefits possibly due modification interfacial properties CdS/ZnO.