作者: Paramita Hajra , Sanjib Shyamal , Harahari Mandal , Debasis Sariket , Arjun Maity
DOI: 10.1016/J.ELECTACTA.2019.01.009
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摘要: Abstract The present paper reports the effect of nitrogen modification on photoelectrochemical (PEC) water oxidation behavior Bi2O3 semiconductor thin film. particles were synthesized via hydrothermal route using Bi(NO3)3 as a Bi3+ ion precursor and urea source followed by drop-cast annealing film at 600 °C. exhibited band gap energy 3.01 eV, calculated from UV–visibleabsorption spectrum which decreases to 2.75 eV through N-modification. Water material has been tested linear sweep voltammetry under periodic illumination. Highest photo-current 180 μAcm−2 measured for reaction 0.95 V vs. Ag/AgCl, illumination 35 mWcm−2. N-incorporation can enhance photocurrent up 50% whereas visible responsiveness improves significantly confirmed electrochemical action spectra UV–visible absorption spectra. photocatalytic activity was decoloration Rhodamine-B dye, spectrophotometric measurements.