Novel electron injection method using band-to-band tunneling induced hot electrons (BBHE) for flash memory with a P-channel cell
作者： T. Ohnakado , K. Mitsunaga , M. Nunoshita , H. Onoda , K. Sakakibara
关键词:
摘要: A novel electron injection scheme for flash memory is proposed, where band-to-band tunneling induced hot electrons (BBHE) are employed in a P-channel cell. This proposed method ensures the realization of high program efficiency, scalability and hot-hole-injection-free operation. We also demonstrate an application to DINOR (DIvided bit-line NOR) An ultra-high-speed programming 60 nsec/Byte can be achieved with leakage current less than 1 mA by utilizing 512 Byte parallel programming. new shown most promising low-voltage, high-performance high-reliability 64 Mbits beyond.
sci-hub.se 参考文章(6)
H. Kume, H. Yamamoto, T. Adachi, T. Hagiwara, K. Komori, T. Nishimoto, A. Koike, S. Meguro, T. Hayashida, T. Tsukada, A flash-erase EEPROM cell with an asymmetric source and drain structure international electron devices meeting. ,vol. 33, pp. 560- 563 ,(1987) , 10.1109/IEDM.1987.191487
T.Y. Chan, J. Chen, P.K. Ko, C. Hu, The impact of gate-induced drain leakage current on MOSFET scaling international electron devices meeting. ,vol. 33, pp. 718- 721 ,(1987) , 10.1109/IEDM.1987.191531
Chi Chang, Jih Lien, Corner-field induced drain leakage in thin oxide MOSFETs international electron devices meeting. pp. 714- 717 ,(1987) , 10.1109/IEDM.1987.191530
K.T. San, C. Kaya, T.P. Ma, Effects of erase source bias on Flash EPROM device reliability IEEE Transactions on Electron Devices. ,vol. 42, pp. 150- 159 ,(1995) , 10.1109/16.370023
Ming-Jer Chen, Jum-Chang Chao, Chia-Hsiang Chen, New observation and the modeling of gate and drain currents in off-state P-MOSFET's IEEE Transactions on Electron Devices. ,vol. 41, pp. 734- 739 ,(1994) , 10.1109/16.285025
C. C. -H. Hsu, A. Acovic, L. Dori, B. Wu, T. Lii, D. Quinlan, D. DiMaria, Y. Taur, M. Wordeman, T. Ning, A High Speed, Low Power P-Channel Flash EEPROM Using Silicon Rich Oxide as Tunneling Dielectric The Japan Society of Applied Physics. ,(1992) , 10.7567/SSDM.1992.PA2-2