Capping layer for extreme low dielectric constant films

摘要: Specific embodiments of the invention provide a silicon-carbide-type or silicon oxycarbide (also often called carbon-doped-oxide [CDO] organosilicate glass) capping material and method for depositing this on ELK films which are used as dielectric in integrated circuits. The film may include any including but not limited to inorganic, organic hybrid materials their respective porous versions. be an amorphous carbide type such commercially available BLOk™ material, carbon-doped oxide Black Diamond™ both developed by Applied Materials Santa Clara, Calif. (a-SiC) is deposited using plasma process non-oxidizing environment CDO-type oxygen-starved process. non-oxidative processes do significantly degrade underlying film's chemical electrical properties. CDO offers advantageous property having lower constant value less than 3.5 opposed a-SiC has approximately 4.5. besides, also superior adhesion characteristics material. However, experiments have indicated that despite its higher constant, a-SiC-type (e.g. BLOk™) generate capped with similar even reduced constants relative k films, composite (i.e. ELK+cap) structures exhibiting stability.