MOCVD of Vertically Aligned ZnO Nanowires Using Bidentate Ether Adducts of Dimethylzinc
作者： Sobia Ashraf , Anthony C. Jones , John Bacsa , Alexander Steiner , Paul R. Chalker
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摘要: The dimethylzinc-bidentate ether adducts [Me2Zn(1,4-dioxane)] (1), [Me2Zn(1,2-dimethoxyethane)] (2) and [Me2Zn(1,4-thioxane)] (3) are used as precursors for the growth of vertically aligned zinc oxide (ZnO) nanowires (NWs) by liquid-injection, metal-organic (MO)CVD. ZnO NWs deposited on Si(111) F-doped SnO2/glass substrates in absence a seed catalyst. (1) to deposit at substrate temperatures 450 °C 500 °C, whilst higher deposition 550–600 °C necessary obtain using (3). X-ray diffraction (XRD) data show that grown from all three adduct wurtzitic phase. Room-temperature photoluminescence (PL) an intense peak 3.28 eV due near band-edge emission with very low intensity defect-related green luminescence 2.42 eV. In contrast, room-temperature PL is dominated deep centre, Auger electron spectroscopy (AES) shows films high purity no detectable carbon, but contaminated sulfur (1 at.-%). Single-crystal structures polymeric containing bridging 1,4-dioxane ligands while monomeric complex featuring chelating 1,2-dimethoxyethane ligand. wide [Me-Zn-Me] bond angles (152.0(3)° 154.5(2)°, respectively) suggest moderately weak [Me2Zn]-ligand interactions. Complex exhibits nearly linear angles, indicative much weaker
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