Photoelectron-induced selective etch process

摘要: The relative photoemission threshold properties of conductive materials are used as a basis for selectively etching in the presence other materials. An irradiation beam pre-selected wavelength is to generate photoemitted electrons locally which turn create reactive etch fragments localized regions adjacent electron source. These react with material be etched form volatile reaction products removed from chamber these reactions take place. Various configurations treatment described. In one embodiment, impinged upon substrate at an incident angle non-orthogonal surfaces.