Enhanced optical power and low forward voltage of GaN-based light-emitting diodes with Ga-doped ZnO transparent conducting layer
作者： Tae-Young Park , Yong-Seok Choi , Jang-Won Kang , Jae-Ho Jeong , Seong-Ju Park
DOI: 10.1063/1.3298644
关键词:
摘要: Ga-doped ZnO (ZnO:Ga) films were grown by metalorganic chemical vapor deposition as transparent conducting layers for GaN light-emitting diodes (LEDs). The forward voltage of …
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TN Oder, KH Kim, JY Lin, HX Jiang, None, III-nitride blue and ultraviolet photonic crystal light emitting diodes Applied Physics Letters. ,vol. 84, pp. 466- 468 ,(2004) , 10.1063/1.1644050
M Yu, J Lin, Y.H Zhou, S.B Wang, Citrate–gel synthesis and luminescent properties of ZnGa2O4 doped with Mn2+ and Eu3+ Materials Letters. ,vol. 56, pp. 1007- 1013 ,(2002) , 10.1016/S0167-577X(02)00664-X
Jingxi Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, T. F. Kuech, p-GaN surface treatments for metal contacts Applied Physics Letters. ,vol. 76, pp. 415- 417 ,(2000) , 10.1063/1.125772
Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi, Takashi Tsunekawa, Yoshiyuki Imada, Munehiro Kato, Tsunemasa Taguchi, High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy Japanese Journal of Applied Physics. ,vol. 40, pp. 583- ,(2001) , 10.1143/JJAP.40.L583
Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin-ichi Nagahama, High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures Japanese Journal of Applied Physics. ,vol. 34, ,(1995) , 10.1143/JJAP.34.L797
Jae-Hong Lim, Dae-Kue Hwang, Hyun-Sik Kim, Jin-Yong Oh, Jin-Ho Yang, R. Navamathavan, Seong-Ju Park, Low-resistivity and transparent indium-oxide-doped ZnO ohmic contact to p-type GaN Applied Physics Letters. ,vol. 85, pp. 6191- 6193 ,(2004) , 10.1063/1.1826231
J.K. Sheu, J.M. Tsai, S.C. Shei, W.C. Lai, T.C. Wen, C.H. Kou, Y.K. Su, S.J. Chang, G.C. Chi, Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer IEEE Electron Device Letters. ,vol. 22, pp. 460- 462 ,(2001) , 10.1109/55.954911
C. H. Kuo, C. L. Yeh, P. H. Chen, W. C. Lai, C. J. Tun, J. K. Sheu, G. C. Chi, Low Operation Voltage of Nitride-Based LEDs with Al-Doped ZnO Transparent Contact Layer Electrochemical and Solid State Letters. ,vol. 11, ,(2008) , 10.1149/1.2953680
Ja-Yeon Kim, Min-Ki Kwon, Jae-Pil Kim, Seong-Ju Park, Enhanced Light Extraction From Triangular GaN-Based Light-Emitting Diodes IEEE Photonics Technology Letters. ,vol. 19, pp. 1865- 1867 ,(2007) , 10.1109/LPT.2007.907644
Chun-Ju Tun, Jinn-Kong Sheu, Bao-Jen Pong, Min-Lum Lee, Ming-Yu Lee, Cheng-Kang Hsieh, Ching-Chung Hu, Gou-Chung Chi, Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer IEEE Photonics Technology Letters. ,vol. 18, pp. 274- 276 ,(2006) , 10.1109/LPT.2005.861987