Application of nano-EBIC to the characterization of GaAs and InP homojunctions
作者： K Smaali , M Troyon
DOI: 10.1088/0957-4484/19/15/155706
关键词:
摘要: High resolution electron-beam-induced current (EBIC) analyses were carried out on InP and GaAs substrates with a home-made atomic force microscope (AFM) combined scanning electron (SEM). With this nano-EBIC microscope, sample can be conventionally imaged by SEM, its local topography investigated AFM image simultaneously obtained. In study, we report the utilization of microscopy for imaging characterizing homojunctions. I–V characteristic measurements allow understanding electrical behavior tip–sample contact. The probe intensity must larger than about 100 pA to able generate an induced because surface states which act as non-radiative recombination centers. minority carrier diffusion length is measured compared different currents it shown that are not perturbed photon recycling, i.e. self-absorption photons gives rise extra generation electron–hole pairs.
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