作者: Da Lei , Weibiao Wang , Leyong Zeng , Jingqiu Liang
DOI: 10.1016/J.PHYSE.2009.01.017
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摘要: A gated nanowire model was proposed to estimate the field-emission performance of a conductive in structure. The actual electric fields around top and field-enhancement factor were calculated analytically based on an electrostatic theory. influence device parameters such as gate anode voltages, gate-hole radius, radius length factor, current apex density discussed detail. results show that field enhancement increases rapidly with decrease but former almost linearly length. In addition, it found at edge exponentially voltages.