Deposition of Pb(Zr,Ti)O3 thin films by metal-organic chemical vapor deposition using β-diketonate precursors at low temperatures

摘要: Lead zirconate titanate (PZT) thin films were deposited by metal-organic chemical vapor deposition (MOCVD) using {beta}-diketonate precursors and O{sub 2} at temperatures below 500 C on variously passivated Si substrates. PZT could not be bare substrates, owing to a serious diffusion of Ph into the substrate during deposition. Pt/SiO{sub 2}/Si substrates partially block Pb, but direct resulted in very inhomogeneous A TiO{sub buffer layer suppress produce homogeneous films. However, crystallinity 2}-buffered was good enough, showed random growth direction. PbTiO{sub 3}-buffered had a- c-axis oriented film 350 fine amorphous phases grain boundaries, low reactivities constituent elements that temperature, they crystallized rapid thermal annealing (RTA) 700 C. onmore » 1,000-{angstrom} 3}-thin-film-buffered thermally annealed for 6 min single-phase perovskite structure with composition near morphotropic boundary composition.« less