Oriented SnS thin films formed by nano-multilayer method
作者： Zhan Xu , Yigang Chen , Weimin Shi , Linjun Wang
DOI: 10.1117/12.888219
关键词:
摘要: Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed thermal annealing at 400 degrees for 3 hours in Argon atmosphere. The showed strong (040) crystal orientation the with stoichiometric ratio (Sn:S) of 1:1. film had an optical energy band gap Eg=1.44 ev and a P-type conductivity with a resistivity 5 Ω•cm.
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