Advanced transistors with punch through suppression
作者： Sachin R. Sonkusale , Lucian Shifren , Scott E. Thompson , Paul E. Gregory , Pushkar Ranade
DOI:
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摘要: An advanced transistor with punch through suppression includes a gate length Lg, well doped to have first concentration of dopant, and screening region positioned under the having second dopant. The dopant may be greater than 5×10 18 atoms per cm 3 . At least one is disposed between well. has third intermediate A bias voltage applied adjust threshold transistor.
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