Recent CdZnTe detector fabrication developments

摘要: High resistivity CdZnTe has attracted extensive interests for its use as x-ray and gamma-ray detector operated at room elevated temperature due to superior electro-optical structural properties compared other materials. The post- growth surface annealing under constituent over pressure, passivation, oxidation chemical etching in terms of restoring stoichiometry, reducing damage charge carrier trapping centers have been investigated by low photoluminescence, photoelectron spectroscopy atomic force microcopy. choice contacting metal deposition method also plays an important role lowering leakage current increasing the ohmic behavior between contact detector, subsequently directly affects performance. data revealed spectroscopic microscopic measurements were correlated with current-voltage spectrum results give improved fabrication process based on detector. These are presented discussed.© (1997) COPYRIGHT SPIE--The International Society Optical Engineering. Downloading abstract is permitted personal only.