Electronic and transport behavior of doped armchair silicene nanoribbons exhibiting negative differential resistance and its FET performance

摘要: In the present work, density functional theory (DFT) combined with non-equilibrium Green’s function (NEGF) formalism is performed. The electronic properties (band structure and of states) transport (transmission spectrum I–V characteristics) armchair silicene nanoribbons (ASiNRs) doped various elements, such as Al, Ga, In, Tl, P, As, Sb Bi, are investigated. negative differential resistance observed for each ASiNR. most geometrically stable maximum peak current to valley (Ip/Iv) ratio in indium (In) ASiNRs. Finally, ASiNRs proposed field effect transistor (ASiNR-FET) formation using high dielectric constant value lanthanum oxide (La2O3 = 29) at different applied gate voltages (−0.1 0.4 V). ASiNR device shows a phenomenon, which can be controlled by an voltage. It found that doping electrodes scattering region provides higher drain current, Ion/Ioff Ip/Iv ratios. Our results have great application digital devices memory devices, frequency applications future nanoelectronics.