Edge effects in a gated submicron resonant tunneling diode
作者： P. H. Beton , M. W. Dellow , P. C. Main , T. J. Foster , L. Eaves
DOI: 10.1063/1.106949
关键词:
摘要: We have investigated the current‐voltage [I(V)] characteristics of a gated GaAs/(AlGa)As resonant tunneling diode. As negative gate voltage is progressively increased I(V) becomes asymmetric. In particular peak‐to‐valley ratio in forward bias decreased from ≂20 to ≂1, but reverse remains constant ≂20. This arises lateral variation drop across emitter tunnel barrier, which leads smearing resonance. discuss relationship between our experiment and low ratios two‐terminal submicron diodes observed by other groups.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(9)
Science and engineering of one- and zero-dimensional semiconductors Plenum Press. ,(1990) , 10.1007/978-1-4684-5733-9
Bo Su, V. J. Goldman, M. Santos, M. Shayegan, Resonant tunneling in submicron double‐barrier heterostructures Applied Physics Letters. ,vol. 58, pp. 747- 749 ,(1991) , 10.1063/1.104535
W. B. Kinard, Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 8, pp. 393- 396 ,(1990) , 10.1116/1.585032
M.W. Dellow, P.H. Beton, M. Henini, P.C. Main, L. Eaves, S.P. Beaumont, C.D.W. Wilkinson, Gated resonant tunnelling devices Electronics Letters. ,vol. 27, pp. 134- 136 ,(1991) , 10.1049/EL:19910088
P Gueret, N Blanc, R Germann, H Rothuizen, Confinement and Coulomb interactions in Schottky-gated, laterally confined double-barrier quantum well heterostructures Semiconductor Science and Technology. ,vol. 7, ,(1992) , 10.1088/0268-1242/7/3B/120
Seigo Tarucha, Yoshiro Hirayama, Tadashi Saku, Tatsuya Kimura, Resonant tunneling through one- and zero-dimensional states constricted by Al x Ga 1-x As/GaAs/Al x Ga 1-x As heterojunctions and high-resistance regions induced by focused Ga ion-beam implanation Physical Review B. ,vol. 41, pp. 5459- 5462 ,(1990) , 10.1103/PHYSREVB.41.5459
M. Reed, J. Randall, R. Aggarwal, R. Matyi, T. Moore, A. Wetsel, Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure. Physical Review Letters. ,vol. 60, pp. 535- 537 ,(1988) , 10.1103/PHYSREVLETT.60.535
M W Dellow, P H Beton, P C Main, T J Foster, L Eaves, A F Jezierski, W Kool, M Henini, S P Beaumont, C D W Wilkinson, Asymmetry in the I(V) characteristics of a gated resonant tunnelling diode Semiconductor Science and Technology. ,vol. 7, ,(1992) , 10.1088/0268-1242/7/3B/114