Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3
作者： Xiaoding Qi , Joonghoe Dho , Rumen Tomov , Mark G. Blamire , Judith L. MacManus-Driscoll
DOI: 10.1063/1.1862336
关键词:
摘要: Transport properties of aliovalent-ion-doped BiFeO3 (BFO) thin films have been studied in order to identify the cause high leakage currents. Doping 2at.% Ti4+ ions increased dc resistivity by more than three orders magnitude. In contrast, doping 2+ such as Ni2+ reduced two Current–voltage (I–V) characteristics indicated that main conduction mechanism for pure and doped BFO was space charge limited, which associated with free-carriers trapped oxygen vacancies, whereas BFO, field-assisted ionic dominant.
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