A potential role in spintronics

作者: Scott A Chambers

DOI: 10.1016/S1369-7021(02)05423-8

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摘要: Abstract The essential aim of spin electronics, or spintronics, is to use the quantum mechanical particles carry signals and process information. Conventional electronics technology relies on charges electrons holes for this purpose. Signals consist voltage pulses, each which a bundle charged carriers. Furthermore, conventional digital classical in nature that bits are defined terms such discrete charge pulses. Here, ‘1’ bit may be represented by negative pulse whereas ‘0’ would absence pulse. Devices continue diminish size order achieve higher speeds. As shrinkage occurs, design parameters impacted way materials current pushed their limits. Moore’s Law states logic density, amount storable information per unit area, silicon-based integrated circuits doubles every 18 months.

参考文章(28)
K. Eisenbeiser, J. M. Finder, Z. Yu, J. Ramdani, J. A. Curless, J. A. Hallmark, R. Droopad, W. J. Ooms, L. Salem, S. Bradshaw, C. D. Overgaard, Field effect transistors with SrTiO3 gate dielectric on Si Applied Physics Letters. ,vol. 76, pp. 1324- 1326 ,(2000) , 10.1063/1.126023
R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, L. W. Molenkamp, Injection and detection of a spin-polarized current in a light-emitting diode Nature. ,vol. 402, pp. 787- 790 ,(1999) , 10.1038/45502
S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, D. A. Ritchie, Spin-valve effects in a semiconductor field-effect transistor: A spintronic device Physical Review B. ,vol. 60, pp. 7764- 7767 ,(1999) , 10.1103/PHYSREVB.60.7764
L. Forro, O. Chauvet, D. Emin, L. Zuppiroli, H. Berger, F. Lévy, High mobility n‐type charge carriers in large single crystals of anatase (TiO2) Journal of Applied Physics. ,vol. 75, pp. 633- 635 ,(1994) , 10.1063/1.355801
M. Morita, H. Fukumoto, T. Imura, Y. Osaka, M. Ichihara, Growth of crystalline zirconium dioxide films on silicon Journal of Applied Physics. ,vol. 58, pp. 2407- 2409 ,(1985) , 10.1063/1.335912
Scott A. Chambers, Epitaxial growth and properties of thin film oxides Surface Science Reports. ,vol. 39, pp. 105- 180 ,(2000) , 10.1016/S0167-5729(00)00005-4
I.C. Kizilyalli, R.Y.S. Huang, R.K. Roy, MOS transistors with stacked SiO/sub 2/-Ta/sub 2/O/sub 5/-SiO/sub 2/ gate dielectrics for giga-scale integration of CMOS technologies IEEE Electron Device Letters. ,vol. 19, pp. 423- 425 ,(1998) , 10.1109/55.728900
Yuji Matsumoto, Makoto Murakami, Tomoji Shono, Tetsuya Hasegawa, Tomoteru Fukumura, Masashi Kawasaki, Parhat Ahmet, Toyohiro Chikyow, Shin-ya Koshihara, Hideomi Koinuma, Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide Science. ,vol. 291, pp. 854- 856 ,(2001) , 10.1126/SCIENCE.1056186
G. D. Wilk, R. M. Wallace, J. M. Anthony, High-κ gate dielectrics: Current status and materials properties considerations Journal of Applied Physics. ,vol. 89, pp. 5243- 5275 ,(2001) , 10.1063/1.1361065
S. A. Chambers, S. Thevuthasan, R. F. C. Farrow, R. F. Marks, J. U. Thiele, L. Folks, M. G. Samant, A. J. Kellock, N. Ruzycki, D. L. Ederer, U. Diebold, Epitaxial growth and properties of ferromagnetic co-doped TiO2 anatase Applied Physics Letters. ,vol. 79, pp. 3467- 3469 ,(2001) , 10.1063/1.1420434