Porous silicon with embedded metal oxides for gas sensing applications
作者： J. M. Olchowik V. A. Moshnikov , I. E. Gracheva , A. S. Lenshin , Yu. M. Spivak , M. G. Anchkov
DOI: 10.1016/J.JNONCRYSOL.2011.10.017
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摘要: Abstract This paper presents an analysis of the sol deposition process on porous silicon in order to produce highly sensitive gas detectors. Sol solutions were deposited within dendrite structural pore regions n-type silicon. The parameters for structures, built metal oxides (Fe, Ni, Sn), analyzed. A morphological study silicon, with embedded oxide nanocomposites, was carried out using atomic force microscopy. Cross-sections examined a scanning electron Impedance spectroscopy used electrical properties nanomaterials, based nanocomposites. Gas-sensitivity measurements synthesized samples made. It turned that, applying variable frequency interference sensory structures changing environment, changes impedance response gas. New perspectives increasing sensitivity and selectivity are shown.
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