作者: Jin-Seong Park , Jae Kyeong Jeong , Yeon-Gon Mo , Hye Dong Kim , Chang-Jung Kim
DOI: 10.1063/1.2963978
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摘要: … The slight increase in the μ FE with increasing t active , which was in contradiction with the behavior of the corresponding amorphous Si transistor, was explained by the anomalous …