作者: M.B.H Breese , D.G de Kerckhove , P.J.M Smulders , D.N Jamieson
DOI: 10.1016/S0168-583X(99)00595-9
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摘要: Abstract Monte Carlo channeling simulations for 3 MeV protons which are transmitted close to the [0 1 1] axis of a silicon layer up 200 nm thick presented. The emergent angular intensity at different incident tilt angles and thicknesses is related spatial distribution channeled across unit cell. transition between regime where dominated by ‘rainbow’ channeling, characterised ‘doughnut’ studied angles.