Characterization of zirconium dioxide film formed by plasma enhanced metal-organic chemical vapor deposition
作者： Eui-Tae Kim , Soon-Gil Yoon
DOI: 10.1016/0040-6090(93)90179-S
关键词:
摘要: Abstract Zirconium dioxide films were deposited on Si substrates by a plasma enhanced metal-organic chemical vapor deposition process involving the application of mixtures Zr(tfacac)4 and oxygen. Rutherford backscattering spectroscopy (RBS) Auger electron analyses performed to determine composition ZrO2 carbon contamination in respectively. RBS analysis revealed that stoichiometry was obtained zirconia at 295°C. The film 265°C has an amorphous structure above monoclinic structure. rate strongly affected competition with atomic mobility etching complex activated fluorine increasing temperatures.
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