Thermal and Mechanical Analyses of Clamping Area on the Performance of Press-Pack IGBT in Series-Connection Stack Application

摘要: Press-pack insulated gate bipolar transistors (PP-IGBTs) are commonly connected in series and stacked together with heatsinks using an exterior clamping fixture order to achieve high-voltage dc-link levels. A suitable contact area between the device is essential ensuring optimal PP-IGBT thermomechanical performance, especially for first last devices a stack. In this study, effects of on collector deformation, temperature, stress distributions investigated by means finite-element method (FEM). Moreover, article analyzes influence heatsink thickness maximize evenness terminal reduce overall length stack system. The results indicate that lid prone warpage due thermal expansion, which decrease effective component layers. As resistance increases, chips accumulate considerable heat. Increasing at point can adequately compensate warp deformation also improve uniformity chips. Finally, experiment making use stress-sensitive film has been carried out verify developed FEM models.