作者: Supriyo Datta
DOI: 10.1093/OXFORDHB/9780199533046.013.1
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摘要: Nanoscale electronic devices are of great interest for all kinds applications like switching, energy conversion and sensing. The objective this chapter, however, is not to discuss specific or applications. Rather it convey the conceptual framework that has emerged over last twenty years, which important only because practical insights provides into design nanoscale devices, but also affords regarding meaning resistance essence non-equilibrium phenomena in general. We present a unified description applicable wide variety from molecular conductors carbon nanotubes silicon transistors covering different transport regimes ballistic diffusive limit, based on what we call NEGF-Landauer approach.