A high-performance self-aligned UMOSFET with a vertical trench contact structure
作者： S. Matsumoto , T. Ohno , H. Ishii , H. Yoshino
DOI: 10.1109/16.285036
关键词:
摘要: We compare the electrical characteristics of a UMOSFET having trench contact (TC-UMOS) for source and body regions with those conventional surface (SC-UMOS). For SC-UMOS, there exists an optimum cell pitch which gives lowest on-resistance. Reducing beyond that point results in increased on-resistance because resistance increases as is further reduced. On contrary, TC-UMOS, decreases reduced does not change, These show TC-UMOS more effective than SC-UMOS reducing by scaling down pitch. The minimum specific 0.43 m/spl Omega//spl middot/cm/sup 2/. Furthermore, critical avalanche current enhanced significantly compared base parasitic npn-bipolar transistor lower SC-UMOS. >
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