Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces
作者： Sean W. King , Robert F. Davis , Richard J. Carter , Thomas P. Schneider , Robert J. Nemanich
DOI: 10.1116/1.4926733
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摘要: The desorption kinetics of molecular hydrogen (H2) from silicon (001) surfaces exposed to aqueous fluoride and remote plasmas were examined using temperature programmed desorption. Multiple H2 states observed attributed surface monohydride (SiH), di/trihydride (SiH2/3), hydroxide (SiOH) species, subsurface trapped at defects, evolved during the oxides. hydride species dependent on plasma exposure with mono, di, trihydride being after low (150 °C), while predominantly higher (450 °C). ratio versus was also found be substrate 150 °C generally leading more 450 °C s...
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