Semiconductor laser with an active layer having varying thicknesses

作者: Takashi Murakami

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摘要: A semiconductor laser includes a substrate of first conductivity type having ridge extending in direction substantially parallel to the light guide only neighborhood resonator end surface; lower cladding layer type, an active layer, and upper second produced one after other on above-mentioned order such manner that portion above is thinner than inside removed from surface.

参考文章(7)
Osamu Yoneyama, Tatsuji Oda, Takayoshi Mamine, Laser device formed with a stripe light emission region ,(1983)
Masayasu Ueno, Hiroo Yonezu, Stripe-geometry double heterojunction laser element ,(1979)
M. Wada, K. Hamada, H. Shimizu, M. Kume, F. Tajiri, K. Itoh, G. Kano, Monolithic high-power dual-wavelength GaAlAs laser array Applied Physics Letters. ,vol. 43, pp. 903- 905 ,(1983) , 10.1063/1.94174
H. Blauvelt, S. Margalit, A. Yariv, Large optical cavity AlGaAs buried heterostructure window lasers Applied Physics Letters. ,vol. 40, pp. 1029- 1031 ,(1982) , 10.1063/1.92984
H. Yonezu, I. Sakuma, T. Kamejima, M. Ueno, K. Iwamoto, I. Hino, I. Hayashi, High optical power density emission from a ’’window‐stripe’’ AlGaAs double‐heterostructure laser Applied Physics Letters. ,vol. 34, pp. 637- 639 ,(1979) , 10.1063/1.90620
S. Yamamoto, H. Hayashi, S. Yano, T. Sakurai, T. Hijikata, Visible GaAlAs V‐channeled substrate inner stripe laser with stabilized mode using p‐GaAs substrate Applied Physics Letters. ,vol. 40, pp. 372- 374 ,(1982) , 10.1063/1.93107