Electrical characterization and transport model of n-gallium nitride nanowires
作者： O. Benner , C. Blumberg , K. Arzi , A. Poloczek , W. Prost
DOI: 10.1063/1.4929439
关键词:
摘要: The transport data of n-doped gallium-nitride self-assembled nanowires grown by metal-organic vapor-phase-epitaxy are determined. wire diameter varies from 0.4 μm to 1.6 μm while the length was up 50 μm. Optical lithography and lift-off were used form Ti/Au multiple contacts for transmission line measurements. A specific contact resistance ρC = 1.74 × 10−7 Ω cm2 a nanowire resistivity ρNW = 2.27 10−3 cm could be Electrical conductivity measurements carried out model as function radius charge carrier concentration developed. Using this model, magnitude doping level n-GaN is Based on data, dopant GaN wires about n = 1020 cm−3 has been investigated.
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