N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: application to ambipolar FETs
作者： D Taneja , F Sfigakis , A F Croxall , K Das Gupta , V Narayan
DOI: 10.1088/0268-1242/31/6/065013
关键词:
摘要: We report the development of a simple and reliable, front-sided-only fabrication technique for n-type ohmic contacts to two-dimensional electron gases (2DEGs) in undoped GaAs/AlGaAs quantum wells. have adapted well-established recessed contacts/insulated metal gate inducing 2DEG an triangular well also work reliably square Our adaptation involves change procedure etching contact pits optimise etch side-wall profile depth. As application our technique, we present front-side-gated ambipolar field effect transistor (FET), where both 2D hole can be induced same well. results low-temperature (0.3 K - 4 K) transport measurements this device, including assessment quality. On basis findings, discuss why these is difficult how circumvents challenges.
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sci-hub.se 参考文章(49)
Christian P. Morath, John A. Seamons, John L. Reno, Michael P. Lilly, Density imbalance effect on the Coulomb drag upturn in an undoped electron-hole bilayer Physical Review B. ,vol. 79, pp. 041305- ,(2009) , 10.1103/PHYSREVB.79.041305
Carroll I H Ashby, Albert G Baca, Fabrication of GaAs Devices ,(2005)
S. Sarkozy, F. Sfigakis, K. Das Gupta, I. Farrer, D. A. Ritchie, G. A. C. Jones, M. Pepper, Zero-bias anomaly in quantum wires Physical Review B. ,vol. 79, pp. 161307- ,(2009) , 10.1103/PHYSREVB.79.161307
W. Y. Mak, F. Sfigakis, K. Das Gupta, O. Klochan, H. E. Beere, I. Farrer, J. P. Griffiths, G. A. C. Jones, A. R. Hamilton, D. A. Ritchie, Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas arXiv: Mesoscale and Nanoscale Physics. ,(2011) , 10.1063/1.4795613
J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, Surface-acoustic-wave-driven luminescence from a lateral p-n junction Applied Physics Letters. ,vol. 89, pp. 243505- ,(2006) , 10.1063/1.2405419
W.R. Clarke, A.P. Micolich, A.R. Hamilton, M.Y. Simmons, K. Muraki, Y. Hirayama, Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET Microelectronics Journal. ,vol. 36, pp. 327- 330 ,(2005) , 10.1016/J.MEJO.2005.02.073
P. Zwicknagl, Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral comparison Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 4, pp. 476- 484 ,(1986) , 10.1116/1.583406
H. van Houten, B. J. van Wees, M. G. J. Heijman, J. P. André, Submicron conducting channels defined by shallow mesa etch in GaAs‐AlGaAs heterojunctions Applied Physics Letters. ,vol. 49, pp. 1781- 1783 ,(1986) , 10.1063/1.97243
J. E. Furneaux, T. L. Reinecke, Effects of interface charge on the quantum Hall effect Physical Review B. ,vol. 33, pp. 6897- 6908 ,(1986) , 10.1103/PHYSREVB.33.6897
F. Sfigakis, K. Das Gupta, S. Sarkozy, I. Farrer, D.A. Ritchie, M. Pepper, G.A.C. Jones, Benefits of using undoped GaAs/AlGaAs heterostructures: A case study of the zero-bias bias anomaly in quantum wires Physica E-low-dimensional Systems & Nanostructures. ,vol. 42, pp. 1200- 1204 ,(2010) , 10.1016/J.PHYSE.2009.12.018