作者: Fatih V. Celebi , Ilker Dalkiran , Kenan Danisman
DOI: 10.1016/J.IJLEO.2005.11.011
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摘要: Abstract In this study, a single, simple and an accurate computer-aided design model is developed in order to obtain the injection level dependence of critical quantities broad-area (with width 50 μm or more) InGaAs deep quantum-well (QW) lasers. Each these (gain, refractive index variation, alpha ( α ) parameter) requires lengthy mathematical calculations with use different theories, assumptions, approximations, estimations some parameter values. The based on artificial neural network (ANN) approach that total computational time microseconds for whole get their results are very good agreement previously obtained from QW laser sample.