Rapid thermal plasma deposition of transparent nanocrystalline ZnO thin films and the effects of annealing

摘要: Conductive, undoped zinc oxide nanocrystalline thin film with predominant c-axis orientation is prepared on crystalline and amorphous substrates using a rapid, one-step ambient-pressure, thermal plasma chemical vapor deposition process. Nonporous conformal films can be at temperature as low 160°C, an average grain size of 25 nm. Scanning electron micrographs indicate growth rate 15∼50 nm/min, depending factor including source temperature, pressure. X-ray diffraction shows (002) that independent the substrate's crystallinity. For thickness 200 nm, electrical conductivity ranges from 60–910 S/m. The results demonstrate potential CVD for rapid synthesis conductive ambient condition.