Low temperature metallic state induced by electrostatic carrier doping of SrTiO3
作者： H. Nakamura , T. Hasegawa , Y. Tokura , Y. Takahashi , I. H. Inoue
DOI: 10.1063/1.2357850
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摘要: Transport properties of SrTiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying voltage, the sheet resistance falls below R◻∼10kΩ at low temperatures, carrier mobility exceeding 1000cm2∕Vs. The temperature dependence taken under constant voltage exhibits metallic behavior (dR∕dT>0). Results demonstrate an to metal transition in SrTiO3 driven by electrostatic density control.
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