Binding energies for carbon atoms and clusters deposited on the Si(100) surface

摘要: Abstract Binding energies of carbon atoms adsorbed on a (2×1) reconstructed Si(100) surface were calculated as function sub-monolayer coverages. Also for C deposited the small clusters, n (with = 3 and 4). All calculations conducted considering model potential developed recently systems containing Si atoms. For low coverage limit (representing coverages up to one monolayer), adatoms considered occupying only energy sites. Owing relatively large separations among these sites, C-C interactions are negligible Si-C found be contributing binding energies. The lowest in this case corresponds θ 0.25. In clusters surface, however, stronger because increasing importance interactions. From an energetic viewpoint, results obtained study indicate that adsorbing more likely form than layer-by-layer growth leading smooth uniform coverage. This outcome was consistent with various experimental results.