The formation and control of direct current magnetron discharges for the high‐rate reactive processing of thin films

摘要: The process of reactive dc magnetron sputtering is shown to provide a high‐rate, large‐area deposition system when stability achieved using optical emission spectroscopy control the gas flow. film properties are improved isolated substrate allowed acquire bias by immersion in plasma directed onto it from source. These techniques give good results at high rates production without complications rf or ion beam systems. Results for oxide systems indium and titanium presented. Indium films gave resistivity 4×10−6 Ω m refractive value 2.55 633 nm deposited room‐temperature substrates.