Electronic Band Structures of Ce3Pt3Sb4 and Ce3Pt3Bi4
作者： Katsuhiko Takegahara , Hisatomo Harima , Yasunori Kaneta , Akira Yanase
DOI: 10.1143/JPSJ.62.2103
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摘要: One-electron energy band structures for Ce 3 Pt X 4 (X=Sb and Bi), which belong to the valence fluctuation regime with an gap, are calculated by a self-consistent LAPW method local density approximation. The bands consist of p 5 d states conduction derived from states. With depressing bands, empty f located between these thus narrow gap appears at Fermi level. This result explains reasonably semiconductor-like property compounds.
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