作者: Sungsik Lee , Arokia Nathan
DOI: 10.17863/CAM.5890
关键词:
摘要: The research data support the Science paper entitled "Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain". These supplementary are composed of useful information, such as materials to help other people follow work easily, supporting literature related relevant references along their DOI links again for check easily this work.