Atomistic Modeling of Defects Implicated in the Bias Temperature Instability

摘要: Capture and emission of carriers by point defects in gate dielectrics, such as SiO2 HfO2, at their interfaces with the substrate are thought to be responsible for performance reliability issues MOS devices, particularly dielectric degradation bias temperature instability (BTI). Ultra-thin silicon dioxide films present interface between Si high-κ oxides; thus it is hoped that understanding silica which contribute BTI will also aid devices containing oxides. This chapter reviews state art modeling oxygen deficiency implicated both electron hole trapping amorphous (a-SiO2).