Immersion nickel deposition on blank silicon in aqueous solution containing ammonium fluoride
作者： Xi Zhang , Zhong Chen , K.N. Tu
DOI: 10.1016/J.TSF.2006.11.033
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摘要: Abstract Immersion deposition of Ni on p-Si (100) blank substrates was carried out in an aqueous NiSO4 solution at a pH value 8 through displacement reactions. Study the early stage revealed that incorporation 2.5 M NH4F promoted nucleation significantly. By adding fluoride, it observed metallic deposited constantly expense Si and not self-limited. Sponge-like deposits were might explain non-limiting feature such immersion over Si. Transmission electron microscopic images Ni/Si cross-sections showed during reactions, oxide played role intermediate phase. The whole process could have involved successive oxidation steps. Eventually etched away by fluoride resulting nanoporous film.
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