Quantum interference and structure-dependent orbital-filling effects on the thermoelectric properties of quantum dot molecules

摘要: The quantum interference and orbital filling effects on the thermoelectric (TE) properties of dot (QD) molecules with high figure merit are illustrated via full solution to Hubbard–Anderson model in Coulomb blockade regime. It is found that under certain conditions triangular QD molecule (TQDM), destructive (QI) can occur, which leads vanishingly small electrical conductance, while Seebeck coefficient modified dramatically. When TQDM charge localization state due QI, seriously suppressed at low temperature, but highly enhanced temperature. Meanwhile, behavior Lorenz number reveals it easier block transport QI than electron heat temperatures. maximum power factor (PF) occurs full-filling conditions. Nevertheless, low-filling preferred for getting PF serially coupled triple QDs general. In double QDs, be achieved either orbital-depletion or orbital-filling as a result electron–hole symmetry. Our theoretical work provides useful guideline advancement nanoscale TE technology.