Kinetics of creation and of thermal annealing of light-induced defects in microcrystalline silicon solar cells

摘要: Single-junction microcrystalline silicon (mu c-Si:H) solar cells of selected i-layer crystalline volume fractions were light soaked (AM1.5, 1000 h at 50 degrees C) and subsequently annealed increasing temperatures. The variations subbandgap absorption during soaking thermal annealing monitored by Fourier transform photocurrent spectroscopy. kinetics shown to follow stretched exponential functions over long times such as h. effective time constants appearing in the function decrease with decreasing fraction well temperature. Their Arrhenius-like dependence on temperature is characterized a unique value activation energy. Furthermore, we demonstrate that configuration (p-i-n or n-i-p) does not influence degradation kinetics, average crystallinity intrinsic layer comparable value. (C) 2008 American Institute Physics.