Method of forming isolated features using pitch multiplication
作者： Luan C. Tran
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摘要: Crisscrossing spacers formed by pitch multiplication are used as a mask to form isolated features, such contacts vias. A first plurality of mandrels on level and around each the mandrels. second is above level. The so that they cross, e.g., orthogonal to, mandrels, when viewed in top down view. selectively removed leave pattern voids defined crisscrossing pluralities spacers. These can be transfer substrate. filled with material, conductive contacts.
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