作者: Akihiro Wakahara , Takashi Tokuda , Xiao-Zhong Dang , Susumu Noda , Akio Sasaki
DOI: 10.1063/1.119684
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摘要: Compositional inhomogeneity in a GaInN ternary alloy layer is investigated. A theoretical estimation of the interaction parameter based on delta lattice suggests that immiscibility InN nitride very strong. We investigate compositional splitting and existence inclusion epilayer grown sapphire (0001) substrates. The mechanism discussed.