High-current CNT films grown directly on commercially available 2.5D substrates for low-voltage field-emission electron sources.
作者： Baoqing Zeng , Nannan Li , Yi Luo , Fei Yan
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摘要: Carbon nanotube (CNT) based electronic devices are promising for beyond-silicon solid-state electronics and vacuum micro-nano-electronics. Despite rapid progress in CNT field-effect transistor related electronics, the development of CNT-based nanoelectronic is substantially blocked by longstanding challenges demanding high-current field-emission (FE) electron sources at low operating voltage. In addition to CNTs' properties, FE characteristics also affected substrate morphology interface state. This work demonstrates relatively voltage using films grown directly on commercially available 2.5D substrates with matched feature size improved contact. Simulation results indicate that including nickel foam (NiF) carbon cloth (CC) appropriate would dramatically help enhance emission current a lower Modified fabrication process contact between CNTs underlying substrates. Twenty times higher density halved turn-on electric field achieved randomly picked NiF shows potential good improving characteristics. Finally, high (6 mA) approximately 75 percent decrease was realized matching CNTs, bringing us significantly closer reliable low-voltage practical applications.
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