Emitter base junction ESD reliability of an epitaxial base silicon germanium heterojunction bipolar transistor
作者： S.H. Voldman , L.D. Lanzerotti , R. Johnson
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摘要: With the growth of high-speed data rate transmission, optical interconnect, and wireless marketplaces, heterojunction devices will play a central role in these communication systems. Heterojunction base-emitter design, bandgap engineering technology scaling each key ability to achieve faster for wired markets. As structures are scaled, sensitivity electrostatic overstress (EOS), discharge (ESD) electromagnetic emissions (EMI) becomes concern. Emitter-base design influences ESD device performance bipolar transistor (HBT) devices. In this paper, emitter-base junction SiGe HBT is discussed. The evaluation process variations spacings on robustness evaluated both positive negative stress conditions as function salicide location, spacing, collector opening.
sci-hub.se 参考文章(23)
S. Voldman, P. Juliano, J. Schmidt, R. Johnson, L. Lanzerotti, A. Joseph, C. Brennan, J. Dunn, D. Harame, E. Rosenbaum, B. Meyerson, Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors electrical overstress electrostatic discharge symposium. pp. 239- 250 ,(2000) , 10.1109/EOSESD.2000.890052
U. Konig, SiGe and GaAs as competitive technologies for RF-applications bipolar/bicmos circuits and technology meeting. pp. 87- 92 ,(1998) , 10.1109/BIPOL.1998.741886
J.R. Hauser, The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries IEEE Transactions on Electron Devices. ,vol. 11, pp. 238- 242 ,(1964) , 10.1109/T-ED.1964.15318
D.L. Harame, J.M.C. Stork, B.S. Meyerson, T.N. Nguyen, G.J. Scilla, Epitaxial-base transistors with ultrahigh vacuum chemical vapor deposition (UHV/CVD) epitaxy: enhanced profile control for greater flexibility in device design IEEE Electron Device Letters. ,vol. 10, pp. 156- 158 ,(1989) , 10.1109/55.31702
H. Kroemer, Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region Solid-state Electronics. ,vol. 28, pp. 1101- 1103 ,(1985) , 10.1016/0038-1101(85)90190-X
J. Moll, I. Ross, The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity Proceedings of the IRE. ,vol. 44, pp. 72- 78 ,(1956) , 10.1109/JRPROC.1956.274853
J.M.C. Stork, Bipolar transistor scaling for minimum switching delay and energy dissipation international electron devices meeting. ,vol. 136, pp. 550- 553 ,(1988) , 10.1109/IEDM.1988.32874
D. C. Wunsch, R. R. Bell, Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse Voltages IEEE Transactions on Nuclear Science. ,vol. 15, pp. 244- 259 ,(1968) , 10.1109/TNS.1968.4325054
W. Webster, On the Variation of Junction-Transistor Current-Amplification Factor with Emitter Current Proceedings of the IRE. ,vol. 42, pp. 914- 920 ,(1954) , 10.1109/JRPROC.1954.274751
J.N. Burghartz, J.H. Comfort, G.L. Patton, B.S. Meyerson, J.Y.-C. Sun, J.M.C. Stork, S.R. Mader, C.L. Stanis, G.J. Scilla, B.J. Ginsberg, Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology IEEE Electron Device Letters. ,vol. 11, pp. 288- 290 ,(1990) , 10.1109/55.56477